IPB100N04S4H2ATMA1 vs IPB110P06LMATMA1 Perbandingan

Perbandingan bersamaan detil IPB100N04S4H2ATMA1 dari Infineon dan IPB110P06LMATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB100N04S4H2ATMA1 IPB110P06LMATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode P-Channel
Technology OptiMOS-T2 (trench gate) OptiMOS (trench MOSFET)
Drain-Source Voltage (VDS) 40 V -60 V
Continuous Drain Current (ID) at TC=25C 100 A -100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
RDS(on) at VGS=10V 2.4 mΩ typical —
Maximum Power Dissition (PD) at TC=25C 115 W —
Suhu Hubung Kerja -55C to +175C —
Storage Temperature [DATA_NEEDED: storage temp range] —
Paket PG-TO263-3-2 (D2PAK-2) Surface Mount —
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (up to 260C peak reflow) —
Avalanche Energy (EAS) 100% avalanche tested —
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant (Green Product) —
Maximum Power Dissipation (PD) at TC=25C — 300 W
On-State Resistance (RDS(on) max) at VGS=10V — 11 mOhm @ ID=100A
Gate Threshold Voltage (VGS(th) max) — 2 V @ ID=5.55 mA
Gate-Source Voltage (VGS max) — +/-20 V
Rentang Suhu Kerja — -55 C to +175 C (TJ)
Paket / Case — PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab)
Supplier Device Package — PG-TO263-3-2
Gate Drive Level — Logic-level compatible
Status RoHS — Compliant
Lead-Free — Yes

Spek dan Sumber

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