IPB100N04S4H2ATMA1 vs IPB110P06LMATMA1 比較
詳細並排比較 IPB100N04S4H2ATMA1 由 Infineon 與 IPB110P06LMATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ 啟用中
規格比較
| 參數 | IPB100N04S4H2ATMA1 | IPB110P06LMATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel, Enhancement Mode | P-Channel |
| Technology | OptiMOS-T2 (trench gate) | OptiMOS (trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V | -60 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | -100 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| 工作接面溫度 | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| 封裝 | PG-TO263-3-2 (D2PAK-2) Surface Mount | — |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | MSL1 (up to 260C peak reflow) | — |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| 工作溫度範圍 | — | -55 C to +175 C (TJ) |
| 封裝 / 外殼 | — | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes |