IPB100N04S4H2ATMA1 vs IPB110P06LMATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB100N04S4H2ATMA1 disebabkan oleh Infineon dan IPB110P06LMATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB100N04S4H2ATMA1 IPB110P06LMATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode P-Channel
Technology OptiMOS-T2 (trench gate) OptiMOS (trench MOSFET)
Drain-Source Voltage (VDS) 40 V -60 V
Continuous Drain Current (ID) at TC=25C 100 A -100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
RDS(on) at VGS=10V 2.4 mΩ typical —
Maximum Power Dissition (PD) at TC=25C 115 W —
Suhu Hubungan Operasi -55C to +175C —
Storage Temperature [DATA_NEEDED: storage temp range] —
Kemasan PG-TO263-3-2 (D2PAK-2) Surface Mount —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (up to 260C peak reflow) —
Avalanche Energy (EAS) 100% avalanche tested —
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant (Green Product) —
Maximum Power Dissipation (PD) at TC=25C — 300 W
On-State Resistance (RDS(on) max) at VGS=10V — 11 mOhm @ ID=100A
Gate Threshold Voltage (VGS(th) max) — 2 V @ ID=5.55 mA
Gate-Source Voltage (VGS max) — +/-20 V
Gambaran Suhu Operasi — -55 C to +175 C (TJ)
Kemasan / Case — PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab)
Supplier Device Package — PG-TO263-3-2
Gate Drive Level — Logic-level compatible
Status RoHS — Compliant
Lead-Free — Yes

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