IPB180P04P4L02ATMA2 vs IPB120P04P4L03ATMA2 Perbandingan

Perbandingan bersamaan detil IPB180P04P4L02ATMA2 dari Infineon dan IPB120P04P4L03ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB180P04P4L02ATMA2 IPB120P04P4L03ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS-P2 —
Tipe Transistor P-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Tc 180 A —
Power Dissipation (PD) at Tc 150 W —
On-State Resistance RDS(on) max 2.4 mOhm at VGS = -10 V (per Infineon product page) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typ/min/max] —
Rentang Suhu Kerja -55 C to +175 C (junction) —
Paket PG-TO263-7-3 (D2PAK-6, 7-pin) PG-TO263-3-2 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 7 (6 + tab) 3 (Gate, Drain, Source)
Automotive Qualification AEC-Q101 —
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Status RoHS Compliant (per Infineon product page) Compliant (per Infineon product page)
Tab Connection Drain —
Transistor Polarity — P-Channel
Continuous Drain Current (ID, Tc=25C) — 120 A
Power Dissipation (PD, Tc=25C) — 136 W
On-Resistance (RDS(on)) — 3.1 mΩ (typ, per Infineon summary)
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Suhu Hubung Kerja — -55C to +175C
Technology Family — OptiMOS-P2
Configuration — Single P-Channel MOSFET

Spek dan Sumber

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