IPB180P04P4L02ATMA2 vs IPB120P04P4L03ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB180P04P4L02ATMA2 disebabkan oleh Infineon dan IPB120P04P4L03ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB180P04P4L02ATMA2 IPB120P04P4L03ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS-P2 —
Jenis Transistor P-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Tc 180 A —
Power Dissipation (PD) at Tc 150 W —
On-State Resistance RDS(on) max 2.4 mOhm at VGS = -10 V (per Infineon product page) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typ/min/max] —
Gambaran Suhu Operasi -55 C to +175 C (junction) —
Kemasan PG-TO263-7-3 (D2PAK-6, 7-pin) PG-TO263-3-2 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 7 (6 + tab) 3 (Gate, Drain, Source)
Automotive Qualification AEC-Q101 —
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Status RoHS Compliant (per Infineon product page) Compliant (per Infineon product page)
Tab Connection Drain —
Transistor Polarity — P-Channel
Continuous Drain Current (ID, Tc=25C) — 120 A
Power Dissipation (PD, Tc=25C) — 136 W
On-Resistance (RDS(on)) — 3.1 mΩ (typ, per Infineon summary)
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Suhu Hubungan Operasi — -55C to +175C
Technology Family — OptiMOS-P2
Configuration — Single P-Channel MOSFET

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