IPB35N10S3L26ATMA2 vs IAUCN10S5L110TATMA1 Perbandingan

Perbandingan bersamaan detil IPB35N10S3L26ATMA2 dari Infineon dan IAUCN10S5L110TATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPB35N10S3L26ATMA2 IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon

IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon

IPB35N10S3L26ATMA2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPB35N10S3L26ATMA2 IAUCN10S5L110TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS Power-Transistor —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) at Tc 35 A —
Arus Kedip Pengecor 180 A —
Power Dissipation (Pd) at Tc 71 W —
RDS(on) (typical) 26.3 mOhm —
Paket PG-TO263-3-2 (D2PAK) PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +175C —
Jumlah Pin 3 —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical value] —
Status RoHS Compliant Compliant
Automotive Qualified Yes (per Infineon product page classification) —
Series — OptiMOS 5
Technology — N-Channel MOSFET, Trench, Logic Level
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tj — 61 A
On-Resistance RDS(on) max at VGS=10V — 11.3 mΩ
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage rating]
Power Dissipation (PD) at Tc — 88 W
Suhu Hubung Kerja — -55 °C to +175 °C
Storage Temperature — [DATA_NEEDED: storage temperature]
Level MSL — MSL1 (260°C peak reflow)
Avalanche Rated — 100% Avalanche Tested
Automotive Qualification — AEC-Q101 Extended Qualification

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon