IPB35N10S3L26ATMA2 vs IAUCN10S5L110TATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB35N10S3L26ATMA2 disebabkan oleh Infineon dan IAUCN10S5L110TATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPB35N10S3L26ATMA2 IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon

IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon

IPB35N10S3L26ATMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPB35N10S3L26ATMA2 IAUCN10S5L110TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS Power-Transistor —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) at Tc 35 A —
Arus Alir Gesa 180 A —
Power Dissipation (Pd) at Tc 71 W —
RDS(on) (typical) 26.3 mOhm —
Kemasan PG-TO263-3-2 (D2PAK) PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C —
Bilangan Pin 3 —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical value] —
Status RoHS Compliant Compliant
Automotive Qualified Yes (per Infineon product page classification) —
Series — OptiMOS 5
Technology — N-Channel MOSFET, Trench, Logic Level
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tj — 61 A
On-Resistance RDS(on) max at VGS=10V — 11.3 mΩ
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage rating]
Power Dissipation (PD) at Tc — 88 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Storage Temperature — [DATA_NEEDED: storage temperature]
Aras MSL — MSL1 (260°C peak reflow)
Avalanche Rated — 100% Avalanche Tested
Automotive Qualification — AEC-Q101 Extended Qualification

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