IPB35N10S3L26ATMA2 vs IAUCN10S5L110TATMA1 比較
詳細並排比較 IPB35N10S3L26ATMA2 由 Infineon 與 IAUCN10S5L110TATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPB35N10S3L26ATMA2 | IAUCN10S5L110TATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS Power-Transistor | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) at Tc | 35 A | — |
| 脈衝汲極電流 | 180 A | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| RDS(on) (typical) | 26.3 mOhm | — |
| 封裝 | PG-TO263-3-2 (D2PAK) | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +175C | — |
| 腳位數 | 3 | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| RoHS 狀態 | Compliant | Compliant |
| Automotive Qualified | Yes (per Infineon product page classification) | — |
| Series | — | OptiMOS 5 |
| Technology | — | N-Channel MOSFET, Trench, Logic Level |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tj | — | 61 A |
| On-Resistance RDS(on) max at VGS=10V | — | 11.3 mΩ |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: gate-source voltage rating] |
| Power Dissipation (PD) at Tc | — | 88 W |
| 工作接面溫度 | — | -55 °C to +175 °C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| MSL 等級 | — | MSL1 (260°C peak reflow) |
| Avalanche Rated | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Extended Qualification |