IPC70N04S5L4R2ATMA1 vs IPC50N04S55R8ATMA1 Perbandingan
Perbandingan bersamaan detil IPC70N04S5L4R2ATMA1 dari Infineon dan IPC50N04S55R8ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPC70N04S5L4R2ATMA1 | IPC50N04S55R8ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 (trench MOSFET) |
| Drain to Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 70 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 50 W | — |
| R_DS(on) Max @ Vgs=10V | 4.2 mΩ (typ) | — |
| Gate Threshold (Vgs(th)) | Logic Level (4.5 V max Rds On, Min Rds On) | — |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V | — |
| Paket | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-33 (TDSON EP) |
| Operating Temperature (Tj) | -55°C to +175°C | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | MSL1 (up to 260°C peak reflow) | MSL1 (260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Avalanche Tested | 100% (60 A production test) | — |
| Status RoHS | Compliant (Green Product) | — |
| Configuration | Single with Built-in Diode | — |
| Case Connection | DRAIN | — |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) at Tc | — | 50 A |
| Power Dissipation (P_D) at Tc | — | 42 W |
| R_DS(on) Max (V_GS=10V) | — | 5.8 mΩ |
| Output Capacitance (C_oss) | — | 305 pF |
| Gate Threshold (V_GS(th)) | — | [DATA_NEEDED: V_GS(th)] |
| Rentang Suhu Kerja | — | -55 °C to +175 °C |
| Avalanche Rating | — | 100% Avalanche Tested |
| RoHS / Green | — | RoHS compliant, Green Product |
| Polarity | — | Enhancement Mode |