IPC70N04S5L4R2ATMA1 vs IPC50N04S55R8ATMA1 比較

詳細並排比較 IPC70N04S5L4R2ATMA1 由 Infineon 與 IPC50N04S55R8ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPC70N04S5L4R2ATMA1 IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 ✓ 啟用中
Infineon
IPC50N04S55R8ATMA1 IPC50N04S55R8ATMA1 - 40V 50A OptiMOS 5 N-FET | Infineon

IPC50N04S55R8ATMA1 - 40V 50A OptiMOS 5 N-FET | Infineon

IPC50N04S55R8ATMA1 ✓ 啟用中

規格比較

參數 IPC70N04S5L4R2ATMA1 IPC50N04S55R8ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 5 (trench MOSFET)
Drain to Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ Tc=25°C 70 A —
Power Dissipation (Pd) @ Tc=25°C 50 W —
R_DS(on) Max @ Vgs=10V 4.2 mΩ (typ) —
Gate Threshold (Vgs(th)) Logic Level (4.5 V max Rds On, Min Rds On) —
Drive Voltage (Max Rds On, Min Rds On) 4.5 V —
封裝 PG-TDSON-8-34 (Surface Mount) PG-TDSON-8-33 (TDSON EP)
Operating Temperature (Tj) -55°C to +175°C —
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL1 (up to 260°C peak reflow) MSL1 (260 °C peak reflow)
Automotive Qualification AEC-Q101 AEC-Q101
Avalanche Tested 100% (60 A production test) —
RoHS 狀態 Compliant (Green Product) —
Configuration Single with Built-in Diode —
Case Connection DRAIN —
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) at Tc — 50 A
Power Dissipation (P_D) at Tc — 42 W
R_DS(on) Max (V_GS=10V) — 5.8 mΩ
Output Capacitance (C_oss) — 305 pF
Gate Threshold (V_GS(th)) — [DATA_NEEDED: V_GS(th)]
工作溫度範圍 — -55 °C to +175 °C
Avalanche Rating — 100% Avalanche Tested
RoHS / Green — RoHS compliant, Green Product
Polarity — Enhancement Mode

資料表與資源

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