IPD046N08N5ATMA1 vs IAUC60N06S5L073ATMA1 Perbandingan
Perbandingan bersamaan detil IPD046N08N5ATMA1 dari Infineon dan IAUC60N06S5L073ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD046N08N5ATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS™ 5 80V | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) at Tc=25°C | 90 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 4.6 mΩ | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Power Dissipation (PD) at Tc=25°C | 125 W | — |
| Rentang Suhu Hubung Kerja | -55 °C to +175 °C | — |
| Paket / Case | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS™ 5 trench MOSFET | Trench (OptiMOS 5) |
| Status RoHS | ROHS3 Compliant | Compliant |
| Level MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Configuration | Single N-channel, 3-pin (Gate / Drain tab / Source) | Single N-Channel |
| Series | — | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tj | — | 60 A |
| On-Resistance RDS(on) max | — | 7.3 mΩ |
| Total Gate Charge (QG) | — | 17.4 nC |
| Power Dissipation (PD) at Tc | — | 52 W |
| Paket | — | PG-TDSON-8-33 (5x6 mm) |
| Rentang Suhu Kerja | — | -55C to +175C |
| Jumlah Pin | — | 8 |
| Qualification | — | AEC-Q101 automotive grade |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: thermal resistance junction-to-ambient] |