IPD046N08N5ATMA1 vs IAUC60N06S5L073ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD046N08N5ATMA1 disebabkan oleh Infineon dan IAUC60N06S5L073ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD046N08N5ATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS™ 5 80V | — |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) at Tc=25°C | 90 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 4.6 mΩ | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Power Dissipation (PD) at Tc=25°C | 125 W | — |
| Gambaran Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan / Case | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS™ 5 trench MOSFET | Trench (OptiMOS 5) |
| Status RoHS | ROHS3 Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Configuration | Single N-channel, 3-pin (Gate / Drain tab / Source) | Single N-Channel |
| Series | — | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tj | — | 60 A |
| On-Resistance RDS(on) max | — | 7.3 mΩ |
| Total Gate Charge (QG) | — | 17.4 nC |
| Power Dissipation (PD) at Tc | — | 52 W |
| Kemasan | — | PG-TDSON-8-33 (5x6 mm) |
| Gambaran Suhu Operasi | — | -55C to +175C |
| Bilangan Pin | — | 8 |
| Qualification | — | AEC-Q101 automotive grade |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: thermal resistance junction-to-ambient] |