IPD50P04P413ATMA2 vs IPB180P04P4L02ATMA2 Perbandingan

Perbandingan bersamaan detil IPD50P04P413ATMA2 dari Infineon dan IPB180P04P4L02ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD50P04P413ATMA2 IPB180P04P4L02ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Device Type P-Channel MOSFET —
Technology OptiMOS-P2 (Trench) —
Drain-Source Voltage (VDS) -40 V 40 V
Continuous Drain Current (TC=25°C, ID) 50 A —
Continuous Drain Current (TC=100°C, ID) [DATA_NEEDED: ID @ 100°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] —
Power Dissipation (TC=25°C, Ptot) 58 W —
On-State Resistance (RDS(on)) @ VGS=-10V 9.2 mΩ (typ) / 12.6 mΩ (max) —
On-State Resistance (RDS(on)) @ VGS=-4.5V [DATA_NEEDED: RDS(on) @ VGS=-4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Gate-Source Voltage (VGS) max ±20 V —
Maximum Junction Temperature (TJ,max) 175 °C —
Rentang Suhu Kerja -55 °C to +175 °C -55 C to +175 C (junction)
Paket PG-TO252-3-313 (DPAK) PG-TO263-7-3 (D2PAK-6, 7-pin)
Tipe Mounting Surface Mount Surface Mount
Standard Pack Quantity (13" reel) 2500 pcs —
Level MSL 1 [DATA_NEEDED: MSL rating]
Automotive Qualification AEC-Q101 qualified AEC-Q101
Status RoHS Compliant Compliant (per Infineon product page)
Manufacturer — Infineon Technologies
Series — OptiMOS-P2
Tipe Transistor — P-Channel MOSFET
Continuous Drain Current (ID) at Tc — 180 A
Power Dissipation (PD) at Tc — 150 W
On-State Resistance RDS(on) max — 2.4 mOhm at VGS = -10 V (per Infineon product page)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typ/min/max]
Jumlah Pin — 7 (6 + tab)
Tab Connection — Drain

Spek dan Sumber

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