IPD50P04P413ATMA2 vs IPB180P04P4L02ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50P04P413ATMA2 disebabkan oleh Infineon dan IPB180P04P4L02ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD50P04P413ATMA2 IPB180P04P4L02ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Device Type P-Channel MOSFET —
Technology OptiMOS-P2 (Trench) —
Drain-Source Voltage (VDS) -40 V 40 V
Continuous Drain Current (TC=25°C, ID) 50 A —
Continuous Drain Current (TC=100°C, ID) [DATA_NEEDED: ID @ 100°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] —
Power Dissipation (TC=25°C, Ptot) 58 W —
On-State Resistance (RDS(on)) @ VGS=-10V 9.2 mΩ (typ) / 12.6 mΩ (max) —
On-State Resistance (RDS(on)) @ VGS=-4.5V [DATA_NEEDED: RDS(on) @ VGS=-4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Gate-Source Voltage (VGS) max ±20 V —
Maximum Junction Temperature (TJ,max) 175 °C —
Gambaran Suhu Operasi -55 °C to +175 °C -55 C to +175 C (junction)
Kemasan PG-TO252-3-313 (DPAK) PG-TO263-7-3 (D2PAK-6, 7-pin)
Jenis Pemasangan Surface Mount Surface Mount
Standard Pack Quantity (13" reel) 2500 pcs —
Aras MSL 1 [DATA_NEEDED: MSL rating]
Automotive Qualification AEC-Q101 qualified AEC-Q101
Status RoHS Compliant Compliant (per Infineon product page)
Manufacturer — Infineon Technologies
Series — OptiMOS-P2
Jenis Transistor — P-Channel MOSFET
Continuous Drain Current (ID) at Tc — 180 A
Power Dissipation (PD) at Tc — 150 W
On-State Resistance RDS(on) max — 2.4 mOhm at VGS = -10 V (per Infineon product page)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typ/min/max]
Kiraan Pin — 7 (6 + tab)
Tab Connection — Drain

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