IPD80R280P7ATMA1 vs IRF1310NSTRLPBF Perbandingan
Perbandingan bersamaan detil IPD80R280P7ATMA1 dari Infineon dan IRF1310NSTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD80R280P7ATMA1 | IRF1310NSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P7 | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Superjunction (CoolMOS P7) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (V_DS) | 800 V | — |
| Continuous Drain Current (I_D, Tc) | 17 A | — |
| R_DS(on) max at V_GS=10V | 280 mOhm | — |
| Power Dissipation (P_D, Tc) | 101 W | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Paket | PG-TO252-3 (DPAK) | D2PAK (TO-263AB) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Hubung Kerja | -55C to +150C | — |
| ESD Protection | Integrated (per datasheet) | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 36 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | 73.3 nC |
| Power Dissipation (PD) at TC=25C | — | 160 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Rentang Suhu Kerja | — | -55C to +175C |
| Built-in Diode | — | Yes (intrinsic body diode) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Configuration | — | Single with built-in diode |