IPD80R280P7ATMA1 vs IRF1310NSTRLPBF Comparison
Detailed side-by-side comparison of IPD80R280P7ATMA1 by Infineon and IRF1310NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD80R280P7ATMA1 | IRF1310NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P7 | — |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Superjunction (CoolMOS P7) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (V_DS) | 800 V | — |
| Continuous Drain Current (I_D, Tc) | 17 A | — |
| R_DS(on) max at V_GS=10V | 280 mOhm | — |
| Power Dissipation (P_D, Tc) | 101 W | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Package | PG-TO252-3 (DPAK) | D2PAK (TO-263AB) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55C to +150C | — |
| ESD Protection | Integrated (per datasheet) | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | — |
| MSL Level | [DATA_NEEDED: MSL rating] | — |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 36 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | 73.3 nC |
| Power Dissipation (PD) at TC=25C | — | 160 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Operating Temperature Range | — | -55C to +175C |
| Built-in Diode | — | Yes (intrinsic body diode) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Configuration | — | Single with built-in diode |