IPD80R280P7ATMA1 vs IRF1310NSTRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD80R280P7ATMA1 disebabkan oleh Infineon dan IRF1310NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD80R280P7ATMA1 | IRF1310NSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P7 | — |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Superjunction (CoolMOS P7) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (V_DS) | 800 V | — |
| Continuous Drain Current (I_D, Tc) | 17 A | — |
| R_DS(on) max at V_GS=10V | 280 mOhm | — |
| Power Dissipation (P_D, Tc) | 101 W | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Kemasan | PG-TO252-3 (DPAK) | D2PAK (TO-263AB) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Hubungan Operasi | -55C to +150C | — |
| ESD Protection | Integrated (per datasheet) | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | — |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 36 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | 73.3 nC |
| Power Dissipation (PD) at TC=25C | — | 160 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Gambaran Suhu Operasi | — | -55C to +175C |
| Built-in Diode | — | Yes (intrinsic body diode) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Configuration | — | Single with built-in diode |