IPD80R2K4P7ATMA1 vs IPD80R1K4P7ATMA1 Perbandingan
Perbandingan bersamaan detil IPD80R2K4P7ATMA1 dari Infineon dan IPD80R1K4P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD80R2K4P7ATMA1 - 800V CoolMOS P7 2.5A N-Channel MOSFET | Infineon
IPD80R2K4P7ATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IPD80R2K4P7ATMA1 | IPD80R1K4P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Part Number | IPD80R2K4P7ATMA1 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), Superjunction | N-Channel Superjunction |
| Drain-to-Source Voltage (Vdss) | 800 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 2.5 A | — |
| Power Dissipation (Pd) @ Tc=25C | 22 W | — |
| On-Resistance RDS(on) Max @ VGS=10V | 2000 mOhm | — |
| Gate Drive Voltage (typ) | 10 V | — |
| Paket | PG-TO252-3 (DPAK) | PG-TO252-2 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Pins | 3 (2 + Tab) | — |
| Configuration | Single | — |
| Rentang Suhu Kerja | -55C to +150C (junction) | — |
| Part Status | Active | — |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID) at Tc=25C | — | 4 A |
| On-Resistance (RDS(on)) typ/max | — | 1.2 ohm typ / 1.4 ohm max |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typ) |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Dissipasi Listrik (Ptot) | — | 32 W |
| Suhu Hubung Kerja | — | -55C to +150C |
| Jumlah Pin | — | 3 (Gate, Drain/Tab, Source) |
| Status RoHS | — | Compliant |
| REACH Status | — | Compliant |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | — | Yes |
| Body Diode | — | Integrated, fast recovery |