IPD80R2K4P7ATMA1 vs IPD80R1K4P7ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD80R2K4P7ATMA1 sa pamamagitan ng Infineon at IPD80R1K4P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD80R2K4P7ATMA1 - 800V CoolMOS P7 2.5A N-Channel MOSFET | Infineon
IPD80R2K4P7ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPD80R2K4P7ATMA1 | IPD80R1K4P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Part Number | IPD80R2K4P7ATMA1 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), Superjunction | N-Channel Superjunction |
| Drain-to-Source Voltage (Vdss) | 800 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 2.5 A | — |
| Power Dissipation (Pd) @ Tc=25C | 22 W | — |
| On-Resistance RDS(on) Max @ VGS=10V | 2000 mOhm | — |
| Gate Drive Voltage (typ) | 10 V | — |
| Packhaging | PG-TO252-3 (DPAK) | PG-TO252-2 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Pins | 3 (2 + Tab) | — |
| Configuration | Single | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | — |
| Part Status | Active | — |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID) at Tc=25C | — | 4 A |
| On-Resistance (RDS(on)) typ/max | — | 1.2 ohm typ / 1.4 ohm max |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typ) |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Pwersang Pinahihigpit (Ptot) | — | 32 W |
| Temperature ng Junction na Operasyon | — | -55C to +150C |
| Bilang ng Pin | — | 3 (Gate, Drain/Tab, Source) |
| Tindminan RoHS | — | Compliant |
| REACH Status | — | Compliant |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | — | Yes |
| Body Diode | — | Integrated, fast recovery |