IPD90N06S404ATMA2 vs IPD30N06S215ATMA2 Perbandingan
Perbandingan bersamaan detil IPD90N06S404ATMA2 dari Infineon dan IPD30N06S215ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD90N06S404ATMA2 | IPD30N06S215ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 60 V | 55 V |
| Continuous Drain Current (ID, Tc) | 90 A | 30 A |
| Power Dissipation (PD, Tc) | 150 W | 136 W |
| On-Resistance (RDS(on)) | 3.8 mΩ (typ) at VGS = 10 V | — |
| Paket | PG-TO252-3-11 (DPAK), 3-pin surface mount | — |
| Operating Temperature (TJ max) | 175 °C | — |
| Peak Reflow Temperature | 260 °C (MSL1) | — |
| Avalanche Rating | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Technology | OptiMOS | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant (Green Product) | — |
| Level MSL | MSL1 | MSL1 (up to 260 C peak reflow) |
| Polarity | Single N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS Power MOSFET |
| Tipe Transistor | — | N-Channel Enhancement Mode |
| Paket / Case | — | PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab) |
| Suhu Kerja | — | -55 C to +175 C (junction) |
| Avalanche Tested | — | 100% avalanche tested |
| Lead-Free / RoHS | — | Green package (lead free), RoHS compliant |
| Gate Threshold Type | — | Logic-level compatible |
| Packing | — | Tape & Reel (T/R) |