IPD90P04P4L04ATMA2 vs IPD35N10S3L26ATMA2 Perbandingan
Perbandingan bersamaan detil IPD90P04P4L04ATMA2 dari Infineon dan IPD35N10S3L26ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD90P04P4L04ATMA2 | IPD35N10S3L26ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Part Number | IPD90P04P4L04ATMA2 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Family | OptiMOS-P2 | — |
| Channel Type | P-Channel | — |
| Drain-Source Voltage (Vds) | -40 V | — |
| Continuous Drain Current (Id) at Tc=25C | -90 A | — |
| Power Dissipation (Pd) at Tc=25C | 125 W | — |
| On-State Resistance Rds(on) typ at Vgs=-10V | 4.3 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ | [DATA_NEEDED: Vgs(th) typical value] | — |
| Maximum Junction Temperature | 175 C | — |
| Rentang Suhu Kerja | -55 C to +175 C | [DATA_NEEDED: Tj min/max] |
| Paket | PG-TO252-3-313 (DPAK) | PG-TO252-3-11 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (2 + Tab) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Product Family | — | OptiMOS-T |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 35 A |
| On-Resistance R<sub>DS(on)</sub> max | — | 24 mOhm |
| Power Dissipation (Ptot, Tc) | — | 71 W |
| Gate Threshold V<sub>GS(th)</sub> | — | [DATA_NEEDED: gate threshold typical/range] |
| Jumlah Pin | — | 3 (Drain, Source, Gate + tab) |
| Technology | — | Trench MOSFET (OptiMOS-T) |
| Lead-Free | — | Yes |