IPD90P04P4L04ATMA2 vs IPD35N10S3L26ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD90P04P4L04ATMA2 disebabkan oleh Infineon dan IPD35N10S3L26ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD90P04P4L04ATMA2 | IPD35N10S3L26ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Part Number | IPD90P04P4L04ATMA2 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Family | OptiMOS-P2 | — |
| Channel Type | P-Channel | — |
| Drain-Source Voltage (Vds) | -40 V | — |
| Continuous Drain Current (Id) at Tc=25C | -90 A | — |
| Power Dissipation (Pd) at Tc=25C | 125 W | — |
| On-State Resistance Rds(on) typ at Vgs=-10V | 4.3 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ | [DATA_NEEDED: Vgs(th) typical value] | — |
| Maximum Junction Temperature | 175 C | — |
| Gambaran Suhu Operasi | -55 C to +175 C | [DATA_NEEDED: Tj min/max] |
| Kemasan | PG-TO252-3-313 (DPAK) | PG-TO252-3-11 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bilangan Pin | 3 (2 + Tab) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Status RoHS | Compliant | Compliant |
| Aras MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Product Family | — | OptiMOS-T |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 35 A |
| On-Resistance R<sub>DS(on)</sub> max | — | 24 mOhm |
| Power Dissipation (Ptot, Tc) | — | 71 W |
| Gate Threshold V<sub>GS(th)</sub> | — | [DATA_NEEDED: gate threshold typical/range] |
| Kiraan Pin | — | 3 (Drain, Source, Gate + tab) |
| Technology | — | Trench MOSFET (OptiMOS-T) |
| Lead-Free | — | Yes |