IPD90P04P4L04ATMA2 vs IPD35N10S3L26ATMA2 比較
詳細並排比較 IPD90P04P4L04ATMA2 由 Infineon 與 IPD35N10S3L26ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD90P04P4L04ATMA2 | IPD35N10S3L26ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Part Number | IPD90P04P4L04ATMA2 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Family | OptiMOS-P2 | — |
| Channel Type | P-Channel | — |
| Drain-Source Voltage (Vds) | -40 V | — |
| Continuous Drain Current (Id) at Tc=25C | -90 A | — |
| Power Dissipation (Pd) at Tc=25C | 125 W | — |
| On-State Resistance Rds(on) typ at Vgs=-10V | 4.3 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ | [DATA_NEEDED: Vgs(th) typical value] | — |
| Maximum Junction Temperature | 175 C | — |
| 工作溫度範圍 | -55 C to +175 C | [DATA_NEEDED: Tj min/max] |
| 封裝 | PG-TO252-3-313 (DPAK) | PG-TO252-3-11 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (2 + Tab) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Product Family | — | OptiMOS-T |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 35 A |
| On-Resistance R<sub>DS(on)</sub> max | — | 24 mOhm |
| Power Dissipation (Ptot, Tc) | — | 71 W |
| Gate Threshold V<sub>GS(th)</sub> | — | [DATA_NEEDED: gate threshold typical/range] |
| 腳位數 | — | 3 (Drain, Source, Gate + tab) |
| Technology | — | Trench MOSFET (OptiMOS-T) |
| Lead-Free | — | Yes |