IPD90P04P4L04ATMA2 vs IPD90P04P405ATMA2 Perbandingan

Perbandingan bersamaan detil IPD90P04P4L04ATMA2 dari Infineon dan IPD90P04P405ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD90P04P4L04ATMA2 IPD90P04P405ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IPD90P04P4L04ATMA2 —
Manufacturer Infineon Technologies —
Family OptiMOS-P2 —
Channel Type P-Channel —
Drain-Source Voltage (Vds) -40 V —
Continuous Drain Current (Id) at Tc=25C -90 A —
Power Dissipation (Pd) at Tc=25C 125 W —
On-State Resistance Rds(on) typ at Vgs=-10V 4.3 mOhm —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical value] —
Maximum Junction Temperature 175 C —
Rentang Suhu Kerja -55 C to +175 C -55 °C to +175 °C (Tj)
Paket PG-TO252-3-313 (DPAK) PG-TO252-3-313 (DPAK, surface mount)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (2 + Tab) —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Polarity — P-Channel
Drain-Source Voltage (VDS) — -40 V
Continuous Drain Current (ID, Tc) — -90 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD, Tc) — 125 W
On-Resistance RDS(on) at VGS = -10 V — 4.7 mΩ (typical)
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) range]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Jumlah Pin — 3 (Gate, Drain, Source)
Process Technology — OptiMOS-P2 (trench + field plate)

Spek dan Sumber

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