IPD90P04P4L04ATMA2 vs IPD90P04P405ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD90P04P4L04ATMA2 disebabkan oleh Infineon dan IPD90P04P405ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD90P04P4L04ATMA2 IPD90P04P405ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IPD90P04P4L04ATMA2 —
Manufacturer Infineon Technologies —
Family OptiMOS-P2 —
Channel Type P-Channel —
Drain-Source Voltage (Vds) -40 V —
Continuous Drain Current (Id) at Tc=25C -90 A —
Power Dissipation (Pd) at Tc=25C 125 W —
On-State Resistance Rds(on) typ at Vgs=-10V 4.3 mOhm —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical value] —
Maximum Junction Temperature 175 C —
Gambaran Suhu Operasi -55 C to +175 C -55 °C to +175 °C (Tj)
Kemasan PG-TO252-3-313 (DPAK) PG-TO252-3-313 (DPAK, surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Bilangan Pin 3 (2 + Tab) —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Polarity — P-Channel
Drain-Source Voltage (VDS) — -40 V
Continuous Drain Current (ID, Tc) — -90 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD, Tc) — 125 W
On-Resistance RDS(on) at VGS = -10 V — 4.7 mΩ (typical)
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) range]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Kiraan Pin — 3 (Gate, Drain, Source)
Process Technology — OptiMOS-P2 (trench + field plate)

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