IPG16N10S461AATMA1 vs IPG20N04S4L11ATMA1 Perbandingan
Perbandingan bersamaan detil IPG16N10S461AATMA1 dari Infineon dan IPG20N04S4L11ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPG20N04S4L11ATMA1 - 40V 20A Dual N-Ch OptiMOS MOSFET | Infineon
IPG20N04S4L11ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPG16N10S461AATMA1 | IPG20N04S4L11ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Type | Dual N-Channel MOSFET Array | — |
| Technology | OptiMOS™ trench | OptiMOS-T2 trench |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 16 A | — |
| On-Resistance R_DS(on) typ. | 61 mΩ | — |
| Total Power Dissipation (Ptot) | 29 W (T_C = 25°C) | — |
| Configuration | 2 N-Channel (Dual, separate) | — |
| Gate Threshold Voltage V_GS(th) typ. | [DATA_NEEDED: gate threshold voltage] | — |
| Maximum Junction Temperature | 175 °C | — |
| Rentang Suhu Kerja | -55 °C to +175 °C | -55C to +175C |
| Paket | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-4 (Super S08 / 8-TDSON EP) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Terminal Count | 8 | — |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 (260C peak reflow) |
| Status RoHS | Compliant | Compliant (Green Product) |
| Built-in Body Diode | Yes | — |
| Channel Mode | Enhancement | — |
| FET Type | — | 2 N-Channel (Dual) |
| FET Feature | — | Logic Level Gate |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) @ 25C | — | 20 A per channel |
| R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A | — | 11.6 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Maximum Power Dissipation (PD) | — | 41 W |
| Avalanche Rating | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Qualified |