IPG16N10S461AATMA1 vs IPG20N04S4L11ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG16N10S461AATMA1 disebabkan oleh Infineon dan IPG20N04S4L11ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPG16N10S461AATMA1 IPG20N04S4L11ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Type Dual N-Channel MOSFET Array —
Technology OptiMOS™ trench OptiMOS-T2 trench
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 16 A —
On-Resistance R_DS(on) typ. 61 mΩ —
Total Power Dissipation (Ptot) 29 W (T_C = 25°C) —
Configuration 2 N-Channel (Dual, separate) —
Gate Threshold Voltage V_GS(th) typ. [DATA_NEEDED: gate threshold voltage] —
Maximum Junction Temperature 175 °C —
Gambaran Suhu Operasi -55 °C to +175 °C -55C to +175C
Kemasan PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-4 (Super S08 / 8-TDSON EP)
Jenis Pemasangan Surface Mount Surface Mount
Terminal Count 8 —
Aras MSL [DATA_NEEDED: MSL rating] 1 (260C peak reflow)
Status RoHS Compliant Compliant (Green Product)
Built-in Body Diode Yes —
Channel Mode Enhancement —
FET Type — 2 N-Channel (Dual)
FET Feature — Logic Level Gate
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) @ 25C — 20 A per channel
R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A — 11.6 mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Maximum Power Dissipation (PD) — 41 W
Avalanche Rating — 100% Avalanche Tested
Automotive Qualification — AEC-Q101 Qualified

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