IPG16N10S461AATMA1 vs IPG20N04S4L11ATMA1 比較
詳細並排比較 IPG16N10S461AATMA1 由 Infineon 與 IPG20N04S4L11ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPG16N10S461AATMA1 | IPG20N04S4L11ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Type | Dual N-Channel MOSFET Array | — |
| Technology | OptiMOS™ trench | OptiMOS-T2 trench |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 16 A | — |
| On-Resistance R_DS(on) typ. | 61 mΩ | — |
| Total Power Dissipation (Ptot) | 29 W (T_C = 25°C) | — |
| Configuration | 2 N-Channel (Dual, separate) | — |
| Gate Threshold Voltage V_GS(th) typ. | [DATA_NEEDED: gate threshold voltage] | — |
| Maximum Junction Temperature | 175 °C | — |
| 工作溫度範圍 | -55 °C to +175 °C | -55C to +175C |
| 封裝 | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-4 (Super S08 / 8-TDSON EP) |
| 安裝類型 | Surface Mount | Surface Mount |
| Terminal Count | 8 | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | 1 (260C peak reflow) |
| RoHS 狀態 | Compliant | Compliant (Green Product) |
| Built-in Body Diode | Yes | — |
| Channel Mode | Enhancement | — |
| FET Type | — | 2 N-Channel (Dual) |
| FET Feature | — | Logic Level Gate |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) @ 25C | — | 20 A per channel |
| R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A | — | 11.6 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Maximum Power Dissipation (PD) | — | 41 W |
| Avalanche Rating | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Qualified |