IPL60R105P7AUMA1 vs IPL60R115CFD7AUMA1 Perbandingan

Perbandingan bersamaan detil IPL60R105P7AUMA1 dari Infineon dan IPL60R115CFD7AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPL60R115CFD7AUMA1 IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon

IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon

IPL60R115CFD7AUMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPL60R105P7AUMA1 IPL60R115CFD7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOS CFD7
Technology Superjunction (SJ) N-Channel Power MOSFET Superjunction MOSFET (CoolMOS CFD7)
Drain-Source Voltage (VDS) 600 V 600 V
On-Resistance (RDS(on)) max 105 mΩ —
Continuous Drain Current (ID) at Tc 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (Ptot) at Tc 137 W —
Gate Threshold Voltage (VGS(th)) typ 3.5 V —
Gate Charge (Qg) typ 45 nC —
Rentang Suhu Kerja -55C to +150C [DATA_NEEDED: operating temperature range]
Paket PG-VSON-4 (4-pin SMD with exposed pad) —
Tipe Mounting Surface Mount Surface Mount
Channel Type N-Channel —
Level MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant Compliant (per distributor listings)
Bebas Halogen Yes —
Lead-Free Yes —
Part Number — IPL60R115CFD7AUMA1
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 22 A
On-Resistance (RDS(on)) — 115 mOhm (typ, VGS=10V)
Paket / Case — PG-VSON-4 (5x6 mm) with exposed pad
Integrated Body Diode — Yes - fast body diode (CFD)
Application — Resonant high-power topologies (LLC, PFC)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Jumlah Pin — 4
Quantity per Reel — [DATA_NEEDED: reel qty]

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