IPL60R105P7AUMA1 vs IPL60R115CFD7AUMA1 比較

詳細並排比較 IPL60R105P7AUMA1 由 Infineon 與 IPL60R115CFD7AUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPL60R115CFD7AUMA1 IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon

IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon

IPL60R115CFD7AUMA1 ✓ 啟用中

規格比較

參數 IPL60R105P7AUMA1 IPL60R115CFD7AUMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOS CFD7
Technology Superjunction (SJ) N-Channel Power MOSFET Superjunction MOSFET (CoolMOS CFD7)
Drain-Source Voltage (VDS) 600 V 600 V
On-Resistance (RDS(on)) max 105 mΩ —
Continuous Drain Current (ID) at Tc 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (Ptot) at Tc 137 W —
Gate Threshold Voltage (VGS(th)) typ 3.5 V —
Gate Charge (Qg) typ 45 nC —
工作溫度範圍 -55C to +150C [DATA_NEEDED: operating temperature range]
封裝 PG-VSON-4 (4-pin SMD with exposed pad) —
安裝類型 Surface Mount Surface Mount
Channel Type N-Channel —
MSL 等級 [DATA_NEEDED: MSL rating] —
RoHS 狀態 Compliant Compliant (per distributor listings)
無鹵素 Yes —
Lead-Free Yes —
Part Number — IPL60R115CFD7AUMA1
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 22 A
On-Resistance (RDS(on)) — 115 mOhm (typ, VGS=10V)
封裝 / 外殼 — PG-VSON-4 (5x6 mm) with exposed pad
Integrated Body Diode — Yes - fast body diode (CFD)
Application — Resonant high-power topologies (LLC, PFC)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
腳位數 — 4
Quantity per Reel — [DATA_NEEDED: reel qty]

資料表與資源

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