IPL60R105P7AUMA1 vs IPL60R115CFD7AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPL60R105P7AUMA1 disebabkan oleh Infineon dan IPL60R115CFD7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPL60R115CFD7AUMA1 IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon

IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon

IPL60R115CFD7AUMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPL60R105P7AUMA1 IPL60R115CFD7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOS CFD7
Technology Superjunction (SJ) N-Channel Power MOSFET Superjunction MOSFET (CoolMOS CFD7)
Drain-Source Voltage (VDS) 600 V 600 V
On-Resistance (RDS(on)) max 105 mΩ —
Continuous Drain Current (ID) at Tc 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (Ptot) at Tc 137 W —
Gate Threshold Voltage (VGS(th)) typ 3.5 V —
Gate Charge (Qg) typ 45 nC —
Gambaran Suhu Operasi -55C to +150C [DATA_NEEDED: operating temperature range]
Kemasan PG-VSON-4 (4-pin SMD with exposed pad) —
Jenis Pemasangan Surface Mount Surface Mount
Channel Type N-Channel —
Aras MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant Compliant (per distributor listings)
Boson Bebas Yes —
Lead-Free Yes —
Part Number — IPL60R115CFD7AUMA1
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 22 A
On-Resistance (RDS(on)) — 115 mOhm (typ, VGS=10V)
Kemasan / Case — PG-VSON-4 (5x6 mm) with exposed pad
Integrated Body Diode — Yes - fast body diode (CFD)
Application — Resonant high-power topologies (LLC, PFC)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Kiraan Pin — 4
Quantity per Reel — [DATA_NEEDED: reel qty]

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