IPP069N20NM6AKSA1 vs IRFB3207ZPBF Perbandingan

Perbandingan bersamaan detil IPP069N20NM6AKSA1 dari Infineon dan IRFB3207ZPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPP069N20NM6AKSA1 IRFB3207ZPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 200 V 75 V
Continuous Drain Current (ID) at TC=25C 136 A 120 A
Continuous Drain Current (ID) at TA=25C 15.3 A —
Power Dissipation (PD) at TC=25C 300 W —
Power Dissipation (PD) at TA=25C 3.8 W —
On-Resistance RDS(on) max at VGS=10V 6.9 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Total Gate Charge at VGS=10V (Qg) [DATA_NEEDED: Qg value] —
Rentang Suhu Kerja -55C to +175C —
Paket PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) TO-220AB (3-lead through-hole)
Tipe Mounting Through Hole Through Hole
Technology OptiMOS 6 trench MOSFET N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Status RoHS Compliant —
Lead-Free Yes —
Level MSL N/A (through-hole package) N/A (through-hole)
Tab Connection Electrically connected to Drain —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRFB3207ZPBF
Series — HEXFET
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Suhu Hubung Kerja — -55 C to +175 C
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
Avalanche Rated — Yes (improved Z-variant ruggedness)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon