IPP069N20NM6AKSA1 vs IRFB3207ZPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPP069N20NM6AKSA1 tarafından Infineon ve IRFB3207ZPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 ✓ Aktif
Özellik Karşılaştırması
| Parametre | IPP069N20NM6AKSA1 | IRFB3207ZPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 200 V | 75 V |
| Continuous Drain Current (ID) at TC=25C | 136 A | 120 A |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | — |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| On-Resistance RDS(on) max at VGS=10V | 6.9 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Total Gate Charge at VGS=10V (Qg) | [DATA_NEEDED: Qg value] | — |
| İşletim Sıcaklığı Aralığı | -55C to +175C | — |
| Paket | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) | TO-220AB (3-lead through-hole) |
| Montaj Türü | Through Hole | Through Hole |
| Technology | OptiMOS 6 trench MOSFET | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| RoHS Durumu | Compliant | — |
| Lead-Free | Yes | — |
| MSL Seviyesi | N/A (through-hole package) | N/A (through-hole) |
| Tab Connection | Electrically connected to Drain | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| İşletim Jant Sıcaklığı | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |