IPP075N15N3GXKSA1 vs IPB073N15N5ATMA1 Perbandingan
Perbandingan bersamaan detil IPP075N15N3GXKSA1 dari Infineon dan IPB073N15N5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPP075N15N3GXKSA1 | IPB073N15N5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel MOSFET (OptiMOS 3) | OptiMOS 5 (superjunction trench) |
| Drain-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Power Dissipation (PD, Tc=25C) | 300 W | — |
| On-State Resistance (RDS(on) max, VGS=10V) | 7.5 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage absolute max] | — |
| Paket | PG-TO220-3 (TO-220 through-hole) | PG-TO263-3-2 (D2PAK-3L, surface mount) |
| Tipe Mounting | Through Hole | Surface Mount (SMD) |
| Rentang Suhu Kerja | [DATA_NEEDED: junction operating temperature range] | -55°C to +175°C (junction) |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Lead-Free / RoHS | RoHS Compliant | — |
| Ordering Code Suffix | GXKSA1 (Tube pack, RoHS compliant) | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25°C | — | 114 A |
| On-Resistance RDS(on) max at VGS=10V | — | 7.3 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissition (PD) at Tc=25°C | — | 214 W |
| Packaging | — | Tape and Reel (suffix ATMA1) |
| Configuration | — | Single N-channel, 3 pins (Gate, Drain, Source) |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| MSL (Moisture Sensitivity Level) | — | [DATA_NEEDED: MSL level] |