IPP075N15N3GXKSA1 vs IPB073N15N5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP075N15N3GXKSA1 disebabkan oleh Infineon dan IPB073N15N5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPP075N15N3GXKSA1 IPB073N15N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Technology N-Channel MOSFET (OptiMOS 3) OptiMOS 5 (superjunction trench)
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Power Dissipation (PD, Tc=25C) 300 W —
On-State Resistance (RDS(on) max, VGS=10V) 7.5 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage absolute max] —
Kemasan PG-TO220-3 (TO-220 through-hole) PG-TO263-3-2 (D2PAK-3L, surface mount)
Jenis Pemasangan Through Hole Surface Mount (SMD)
Gambaran Suhu Operasi [DATA_NEEDED: junction operating temperature range] -55°C to +175°C (junction)
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS RoHS Compliant —
Ordering Code Suffix GXKSA1 (Tube pack, RoHS compliant) —
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc=25°C — 114 A
On-Resistance RDS(on) max at VGS=10V — 7.3 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Power Dissition (PD) at Tc=25°C — 214 W
Packaging — Tape and Reel (suffix ATMA1)
Configuration — Single N-channel, 3 pins (Gate, Drain, Source)
Status RoHS — Compliant
Lead-Free — Yes
MSL (Moisture Sensitivity Level) — [DATA_NEEDED: MSL level]

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