IPP075N15N3GXKSA1 vs IPB073N15N5ATMA1 比較

詳細並排比較 IPP075N15N3GXKSA1 由 Infineon 與 IPB073N15N5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPP075N15N3GXKSA1 IPP075N15N3GXKSA1 - 150V 100A OptiMOS 3 Power MOSFET | Infineon

IPP075N15N3GXKSA1 - 150V 100A OptiMOS 3 Power MOSFET | Infineon

IPP075N15N3GXKSA1 ✓ 啟用中

規格比較

參數 IPP075N15N3GXKSA1 IPB073N15N5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Technology N-Channel MOSFET (OptiMOS 3) OptiMOS 5 (superjunction trench)
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Power Dissipation (PD, Tc=25C) 300 W —
On-State Resistance (RDS(on) max, VGS=10V) 7.5 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage absolute max] —
封裝 PG-TO220-3 (TO-220 through-hole) PG-TO263-3-2 (D2PAK-3L, surface mount)
安裝類型 Through Hole Surface Mount (SMD)
工作溫度範圍 [DATA_NEEDED: junction operating temperature range] -55°C to +175°C (junction)
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS RoHS Compliant —
Ordering Code Suffix GXKSA1 (Tube pack, RoHS compliant) —
電晶體類型 — N-Channel MOSFET
Continuous Drain Current (ID) at Tc=25°C — 114 A
On-Resistance RDS(on) max at VGS=10V — 7.3 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Power Dissition (PD) at Tc=25°C — 214 W
Packaging — Tape and Reel (suffix ATMA1)
Configuration — Single N-channel, 3 pins (Gate, Drain, Source)
RoHS 狀態 — Compliant
Lead-Free — Yes
MSL (Moisture Sensitivity Level) — [DATA_NEEDED: MSL level]

資料表與資源

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