IPP600N25N3GXKSA1 vs IPD600N25N3GATMA1 Perbandingan

Perbandingan bersamaan detil IPP600N25N3GXKSA1 dari Infineon dan IPD600N25N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPP600N25N3GXKSA1 IPD600N25N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 3 trench MOSFET
Drain-to-Source Voltage (VDS) 250 V —
Continuous Drain Current (ID) at Tc=25C 25 A —
Static Drain-to-Source On-Resistance (RDS(on)) max 60 mOhm at VGS=10V —
Power Dissipation (PD) at Tc=25C 136 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Paket / Case TO-220-3 (PG-TO220-3-1) —
Tipe Mounting Through Hole Surface Mount (Tape & Reel)
Rentang Suhu Kerja -55C to +175C (junction) —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical value] —
Reverse Recovery Time (trr) [DATA_NEEDED: trr typical value] —
Lead Free Status Lead Free / RoHS Compliant —
Jumlah Pin 3 (Gate, Drain, Source) —
Part Series — OptiMOS 3
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 250 V
Continuous Drain Current (ID) at Tc — 25 A
Power Dissipation (PD) at Tc — 136 W
On-Resistance RDS(on) max — 60 mOhm at VGS = 10 V
Tegangan Batas Gerbang — [DATA_NEEDED: VGS(th) typical/min/max]
Suhu Hubung Kerja — -55 C to +175 C
Paket — PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount
Lead Plating — Pb-free
RoHS Compliance — Compliant
Bebas Halogen — Yes, per IEC 61249-2-21
JEDEC Qualification — Qualified for target application

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon