IPP600N25N3GXKSA1 vs IPD600N25N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP600N25N3GXKSA1 disebabkan oleh Infineon dan IPD600N25N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPP600N25N3GXKSA1 IPD600N25N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 3 trench MOSFET
Drain-to-Source Voltage (VDS) 250 V —
Continuous Drain Current (ID) at Tc=25C 25 A —
Static Drain-to-Source On-Resistance (RDS(on)) max 60 mOhm at VGS=10V —
Power Dissipation (PD) at Tc=25C 136 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Kemasan / Case TO-220-3 (PG-TO220-3-1) —
Jenis Pemasangan Through Hole Surface Mount (Tape & Reel)
Gambaran Suhu Operasi -55C to +175C (junction) —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical value] —
Reverse Recovery Time (trr) [DATA_NEEDED: trr typical value] —
Lead Free Status Lead Free / RoHS Compliant —
Kiraan Pin 3 (Gate, Drain, Source) —
Part Series — OptiMOS 3
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 250 V
Continuous Drain Current (ID) at Tc — 25 A
Power Dissipation (PD) at Tc — 136 W
On-Resistance RDS(on) max — 60 mOhm at VGS = 10 V
Tegangan Had Kepasaran — [DATA_NEEDED: VGS(th) typical/min/max]
Suhu Hubungan Operasi — -55 C to +175 C
Kemasan — PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount
Lead Plating — Pb-free
RoHS Compliance — Compliant
Boson Bebas — Yes, per IEC 61249-2-21
JEDEC Qualification — Qualified for target application

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga