IPP60R190P6XKSA1 vs IPA60R190C6XKSA1 Perbandingan
Perbandingan bersamaan detil IPP60R190P6XKSA1 dari Infineon dan IPA60R190C6XKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPP60R190P6XKSA1 | IPA60R190C6XKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P6 | CoolMOS C6 |
| Technology | Superjunction (SJ) MOSFET | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | — |
| On-Resistance RDS(on) max at 25C | 190 mOhm | — |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | — |
| Paket | PG-TO220-3 (through-hole) | PG-TO220-FP (TO-220 FullPAK, 3+tab) |
| Tipe Mounting | Through Hole | Through Hole |
| Gate Drive Voltage (typical) | 10 V | — |
| Rentang Suhu Kerja | -55C to +150C (junction) | -55C to +150C |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level MSL | Not applicable (through-hole) | — |
| Product Variant | XKSA1 (industrial grade, tube pack) | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc=25C) | — | 20.2 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc=25C) | — | 34 W |
| On-State Resistance (RDS(on)) | — | 190 mOhm at VGS=10V, ID=9.5A |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg typ] |
| Tab Isolation | — | Fully isolated (4 kV) |
| Lead Free | — | Yes |