IPP60R190P6XKSA1 vs IPA60R190C6XKSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP60R190P6XKSA1 disebabkan oleh Infineon dan IPA60R190C6XKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPP60R190P6XKSA1 | IPA60R190C6XKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P6 | CoolMOS C6 |
| Technology | Superjunction (SJ) MOSFET | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | — |
| On-Resistance RDS(on) max at 25C | 190 mOhm | — |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | — |
| Kemasan | PG-TO220-3 (through-hole) | PG-TO220-FP (TO-220 FullPAK, 3+tab) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Gate Drive Voltage (typical) | 10 V | — |
| Gambaran Suhu Operasi | -55C to +150C (junction) | -55C to +150C |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Aras MSL | Not applicable (through-hole) | — |
| Product Variant | XKSA1 (industrial grade, tube pack) | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc=25C) | — | 20.2 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc=25C) | — | 34 W |
| On-State Resistance (RDS(on)) | — | 190 mOhm at VGS=10V, ID=9.5A |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg typ] |
| Tab Isolation | — | Fully isolated (4 kV) |
| Lead Free | — | Yes |