IPP60R190P6XKSA1 vs IPA60R190C6XKSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP60R190P6XKSA1 sa pamamagitan ng Infineon at IPA60R190C6XKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP60R190P6XKSA1 - 600V CoolMOS P6 N-Channel MOSFET | Infineon
IPP60R190P6XKSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPP60R190P6XKSA1 | IPA60R190C6XKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P6 | CoolMOS C6 |
| Technology | Superjunction (SJ) MOSFET | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | — |
| On-Resistance RDS(on) max at 25C | 190 mOhm | — |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | — |
| Packhaging | PG-TO220-3 (through-hole) | PG-TO220-FP (TO-220 FullPAK, 3+tab) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Gate Drive Voltage (typical) | 10 V | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | -55C to +150C |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level ng MSL | Not applicable (through-hole) | — |
| Product Variant | XKSA1 (industrial grade, tube pack) | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc=25C) | — | 20.2 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc=25C) | — | 34 W |
| On-State Resistance (RDS(on)) | — | 190 mOhm at VGS=10V, ID=9.5A |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg typ] |
| Tab Isolation | — | Fully isolated (4 kV) |
| Lead Free | — | Yes |