IPP60R190P6XKSA1 vs IPB60R190C6ATMA1 Perbandingan
Perbandingan bersamaan detil IPP60R190P6XKSA1 dari Infineon dan IPB60R190C6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPP60R190P6XKSA1 | IPB60R190C6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P6 | — |
| Technology | Superjunction (SJ) MOSFET | CoolMOS C6 Superjunction N-Channel MOSFET |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | 20.2 A |
| On-Resistance RDS(on) max at 25C | 190 mOhm | — |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | — |
| Paket | PG-TO220-3 (through-hole) | PG-TO263-3 (D2PAK) |
| Tipe Mounting | Through Hole | Surface Mount |
| Gate Drive Voltage (typical) | 10 V | — |
| Rentang Suhu Kerja | -55C to +150C (junction) | -55C to +150C |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level MSL | Not applicable (through-hole) | 1 |
| Product Variant | XKSA1 (industrial grade, tube pack) | — |
| Power Dissipation (PD) at Tc=25C | — | 151 W |
| On-Resistance RDS(on) max at VGS=10V | — | 190 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typ) |
| Total Gate Charge (Qg) typ | — | 32 nC |
| Jumlah Pin | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes (EAS per datasheet) |