IPP60R190P6XKSA1 vs IPB60R190C6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP60R190P6XKSA1 sa pamamagitan ng Infineon at IPB60R190C6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP60R190P6XKSA1 - 600V CoolMOS P6 N-Channel MOSFET | Infineon
IPP60R190P6XKSA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPP60R190P6XKSA1 | IPB60R190C6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P6 | — |
| Technology | Superjunction (SJ) MOSFET | CoolMOS C6 Superjunction N-Channel MOSFET |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | 20.2 A |
| On-Resistance RDS(on) max at 25C | 190 mOhm | — |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | — |
| Packhaging | PG-TO220-3 (through-hole) | PG-TO263-3 (D2PAK) |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Gate Drive Voltage (typical) | 10 V | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | -55C to +150C |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level ng MSL | Not applicable (through-hole) | 1 |
| Product Variant | XKSA1 (industrial grade, tube pack) | — |
| Power Dissipation (PD) at Tc=25C | — | 151 W |
| On-Resistance RDS(on) max at VGS=10V | — | 190 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typ) |
| Total Gate Charge (Qg) typ | — | 32 nC |
| Bilang ng Pin | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes (EAS per datasheet) |