IPP60R190P6XKSA1 vs IPB60R190C6ATMA1 比較
詳細並排比較 IPP60R190P6XKSA1 由 Infineon 與 IPB60R190C6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPP60R190P6XKSA1 | IPB60R190C6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P6 | — |
| Technology | Superjunction (SJ) MOSFET | CoolMOS C6 Superjunction N-Channel MOSFET |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | 20.2 A |
| On-Resistance RDS(on) max at 25C | 190 mOhm | — |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | — |
| 封裝 | PG-TO220-3 (through-hole) | PG-TO263-3 (D2PAK) |
| 安裝類型 | Through Hole | Surface Mount |
| Gate Drive Voltage (typical) | 10 V | — |
| 工作溫度範圍 | -55C to +150C (junction) | -55C to +150C |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL 等級 | Not applicable (through-hole) | 1 |
| Product Variant | XKSA1 (industrial grade, tube pack) | — |
| Power Dissipation (PD) at Tc=25C | — | 151 W |
| On-Resistance RDS(on) max at VGS=10V | — | 190 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typ) |
| Total Gate Charge (Qg) typ | — | 32 nC |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes (EAS per datasheet) |