IPP60R190P6XKSA1 vs IPB60R190C6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP60R190P6XKSA1 disebabkan oleh Infineon dan IPB60R190C6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPP60R190P6XKSA1 | IPB60R190C6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P6 | — |
| Technology | Superjunction (SJ) MOSFET | CoolMOS C6 Superjunction N-Channel MOSFET |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | 20.2 A |
| On-Resistance RDS(on) max at 25C | 190 mOhm | — |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | — |
| Kemasan | PG-TO220-3 (through-hole) | PG-TO263-3 (D2PAK) |
| Jenis Pemasangan | Through Hole | Surface Mount |
| Gate Drive Voltage (typical) | 10 V | — |
| Gambaran Suhu Operasi | -55C to +150C (junction) | -55C to +150C |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Aras MSL | Not applicable (through-hole) | 1 |
| Product Variant | XKSA1 (industrial grade, tube pack) | — |
| Power Dissipation (PD) at Tc=25C | — | 151 W |
| On-Resistance RDS(on) max at VGS=10V | — | 190 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typ) |
| Total Gate Charge (Qg) typ | — | 32 nC |
| Kiraan Pin | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes (EAS per datasheet) |