IPT012N08N5ATMA1 vs IPT067N20NM6ATMA1 Perbandingan

Perbandingan bersamaan detil IPT012N08N5ATMA1 dari Infineon dan IPT067N20NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPT012N08N5ATMA1 IPT067N20NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPT012N08N5ATMA1 —
Technology OptiMOS 5 Trench-gate OptiMOS 6 silicon
Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID, TC) 300 A —
Pulsed Drain Current (IDM) 400 A —
On-Resistance RDS(on) Max 1.2 mOhm —
Total Gate Charge QG 208 nC —
Gate-to-Drain Charge QGD 178 nC —
Power Dissipation (PD, TC) 375 W —
Paket PG-HSOF-8 (TOLL) PG-HSOF-8-1 (8-pin + exposed tab)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +175C (TJ max) -55C to +150C (junction)
Status RoHS Compliant Compliant
Qualification JEDEC JESD47, JESD22, J-STD-020 (industrial) —
Product Family — OptiMOS 6
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TA=25C — 15.3 A
Continuous Drain Current (ID) at TC=25C — 137 A
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 300 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
On-Resistance RDS(on) typ — [DATA_NEEDED: RDS(on) at VGS=10V]
Gate Charge (Qg) typ — [DATA_NEEDED: total gate charge]
Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical value]
Lead-Free — Yes
Level MSL — [DATA_NEEDED: MSL moisture sensitivity level]
Configuration — Single N-channel

Spek dan Sumber

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