IPT012N08N5ATMA1 vs IPT067N20NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT012N08N5ATMA1 disebabkan oleh Infineon dan IPT067N20NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPT012N08N5ATMA1 IPT067N20NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPT012N08N5ATMA1 —
Technology OptiMOS 5 Trench-gate OptiMOS 6 silicon
Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID, TC) 300 A —
Pulsed Drain Current (IDM) 400 A —
On-Resistance RDS(on) Max 1.2 mOhm —
Total Gate Charge QG 208 nC —
Gate-to-Drain Charge QGD 178 nC —
Power Dissipation (PD, TC) 375 W —
Kemasan PG-HSOF-8 (TOLL) PG-HSOF-8-1 (8-pin + exposed tab)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C (TJ max) -55C to +150C (junction)
Status RoHS Compliant Compliant
Qualification JEDEC JESD47, JESD22, J-STD-020 (industrial) —
Product Family — OptiMOS 6
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TA=25C — 15.3 A
Continuous Drain Current (ID) at TC=25C — 137 A
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 300 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
On-Resistance RDS(on) typ — [DATA_NEEDED: RDS(on) at VGS=10V]
Gate Charge (Qg) typ — [DATA_NEEDED: total gate charge]
Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical value]
Lead-Free — Yes
Aras MSL — [DATA_NEEDED: MSL moisture sensitivity level]
Configuration — Single N-channel

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