IPW60R190C6FKSA1 vs IPW60R037P7XKSA1 Perbandingan
Perbandingan bersamaan detil IPW60R190C6FKSA1 dari Infineon dan IPW60R037P7XKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPW60R190C6FKSA1 | IPW60R037P7XKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | CoolMOS™ C6 (Superjunction N-channel) | CoolMOS Superjunction (SJ) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 20.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on), max @ VGS=10V) | 190 mΩ | — |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: VGS(th) typ] | — |
| Total Gate Charge (Qg, typ @ VDS=480V) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD, Tc=25°C) | 151 W | — |
| Suhu Hubung Kerja | -55 °C to +150 °C | -55 °C to +150 °C |
| Thermal Resistance, Junction-to-Case (RθJC) | 0.83 K/W | — |
| Paket | TO-247-3 (PG-TO247-3-1) | PG-TO247-3 (TO-247-3, through-hole) |
| Tipe Mounting | Through-Hole | Through Hole |
| Jumlah Pin | 3 (+ tab) | — |
| Level MSL | N/A (through-hole) | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS™ P7 |
| Tipe Transistor | — | N-Channel MOSFET (Superjunction) |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, Tc=25 °C) | — | 76 A |
| On-Resistance (R_DS(on), max, V_GS=10 V) | — | 37 mΩ |
| Power Dissipation (P_D, Tc=25 °C) | — | 255 W |
| Gate Threshold Voltage (V_GS(th), typ) | — | 3.5 V |
| Orderable Part Number Suffix | — | XKSA1 (tube packaging, industrial) |
| Avalanche Rated | — | Yes |