IPW60R190C6FKSA1 vs IPW60R037P7XKSA1 Comparison

Detailed side-by-side comparison of IPW60R190C6FKSA1 by Infineon and IPW60R037P7XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPW60R037P7XKSA1 IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 ✓ Active

Specification Comparison

Parameter IPW60R190C6FKSA1 IPW60R037P7XKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.05 $3.55
Technology CoolMOS™ C6 (Superjunction N-channel) CoolMOS Superjunction (SJ)
Drain-Source Voltage (VDS) 600 V
Continuous Drain Current (ID, Tc=25°C) 20.2 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on), max @ VGS=10V) 190 mΩ
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: VGS(th) typ]
Total Gate Charge (Qg, typ @ VDS=480V) [DATA_NEEDED: total gate charge]
Power Dissipation (PD, Tc=25°C) 151 W
Operating Junction Temperature -55 °C to +150 °C -55 °C to +150 °C
Thermal Resistance, Junction-to-Case (RθJC) 0.83 K/W
Package TO-247-3 (PG-TO247-3-1) PG-TO247-3 (TO-247-3, through-hole)
Mounting Type Through-Hole Through Hole
Pin Count 3 (+ tab)
MSL Level N/A (through-hole)
RoHS Status Compliant Compliant
Manufacturer Infineon Technologies
Series CoolMOS™ P7
Transistor Type N-Channel MOSFET (Superjunction)
Drain-Source Voltage (V_DSS) 600 V
Continuous Drain Current (I_D, Tc=25 °C) 76 A
On-Resistance (R_DS(on), max, V_GS=10 V) 37 mΩ
Power Dissipation (P_D, Tc=25 °C) 255 W
Gate Threshold Voltage (V_GS(th), typ) 3.5 V
Orderable Part Number Suffix XKSA1 (tube packaging, industrial)
Avalanche Rated Yes

Datasheets & Resources

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