IPW60R190C6FKSA1 vs IPW60R037P7XKSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPW60R190C6FKSA1 sa pamamagitan ng Infineon at IPW60R037P7XKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPW60R037P7XKSA1 IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPW60R190C6FKSA1 IPW60R037P7XKSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology CoolMOS™ C6 (Superjunction N-channel) CoolMOS Superjunction (SJ)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 20.2 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance (RDS(on), max @ VGS=10V) 190 mΩ —
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: VGS(th) typ] —
Total Gate Charge (Qg, typ @ VDS=480V) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD, Tc=25°C) 151 W —
Temperature ng Junction na Operasyon -55 °C to +150 °C -55 °C to +150 °C
Thermal Resistance, Junction-to-Case (RθJC) 0.83 K/W —
Packhaging TO-247-3 (PG-TO247-3-1) PG-TO247-3 (TO-247-3, through-hole)
Uri ng Pagpapasok Through-Hole Through Hole
Bilang ng Pin 3 (+ tab) —
Level ng MSL N/A (through-hole) —
Tindminan RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — CoolMOS™ P7
Uri ng Transistor — N-Channel MOSFET (Superjunction)
Drain-Source Voltage (V_DSS) — 600 V
Continuous Drain Current (I_D, Tc=25 °C) — 76 A
On-Resistance (R_DS(on), max, V_GS=10 V) — 37 mΩ
Power Dissipation (P_D, Tc=25 °C) — 255 W
Gate Threshold Voltage (V_GS(th), typ) — 3.5 V
Orderable Part Number Suffix — XKSA1 (tube packaging, industrial)
Avalanche Rated — Yes

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